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ArticleJ-GLOBAL ID:200902015673145557整理番号:89A0299435

Structure and electronic properties of strained Si/Ge semiconductor superlattices.

歪層Si/Ge半導体超格子の構造と電子的性質

著者:CIRACI S(Bilkent Univ., Ankara, TUR)、BATRA I P(IBM Research Division, CA, USA)
資料名:NATO ASI Series. B. Physics 巻:183 ページ:319-331
発行年:1988年
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