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ArticleJ-GLOBAL ID:200902015674783662整理番号:93A0009230

Modeling Hot-Electron Gate Current in Si MOSFET's Using a Coupled Drift-Diffusion and Monte Carlo Method.

結合ドリフト・拡散/モンテカルロ方法を用いたSi MOSFETのホットエレクトロン・ゲート電流のモデル化

著者:HUANG C(National Chiao‐Tung Univ., Hsin‐Chu, TWN)、WANG T(National Chiao‐Tung Univ., Hsin‐Chu, TWN)、CHEN C N(Industrial Technology Research Inst., Hsin‐Chu, TWN)・・・
資料名:IEEE Trans Electron Devices 巻:39 号:11 ページ:2562-2568
発行年:1992年11月
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