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J-GLOBAL ID:200902015676894453   Reference number:87A0501071

The extraction of terminal charges from two-dimensional device simulations of MOS transistors.

MOSトランジスタの2次元素子シミュレーションからの端子電荷抽出
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Volume:Issue:Page: 107-114  Publication year: Jun. 1987 
JST Material Number: H0945A  ISSN: 0332-1649  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Transistors 
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