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ArticleJ-GLOBAL ID:200902015684804692整理番号:87A0512505

Damage annealing behavior of 3MeV Si+-implanted silicon.

3MeVのSi+をイオン注入したシリコンの損傷の熱処理効果

著者:RAI A K(Universal Energy Systems, Inc., OH, USA)、BAKER J(Universal Energy Systems, Inc., OH, USA)、INGRAM D C(Universal Energy Systems, Inc., OH, USA)
資料名:Appl Phys Lett 巻:51 号:3 ページ:172-174
発行年:1987年07月20日
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