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J-GLOBAL ID:200902015684986626   Reference number:88A0303727

Excitation and decay mechanisms of the intra-4f luminescence of Yb3+ in epitaxial InP:Yb layers.

エピタキシャルInp:Yb層中のYb3+の4f内ルミネセンスの励起および減衰の機構
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Volume: 52  Issue:Page: 114-116  Publication year: Jan. 11, 1988 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Luminescence of semiconductors 
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