High-lifetime strained Si<sub>1-x</sub>Ge<sub>x</sub> films grown by rapid thermal chemical vapor deposition.

STURM J C; SCHWARTZ P V; MANOHARAN H; XIAO X; MI Q

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J-GLOBAL ID：200902015692599674 Reference number：92A0530381

High-lifetime strained Si_1-xGe_x films grown by rapid thermal chemical vapor deposition.

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Author (5)： , , , ,
Material：
Volume： 33 Issue： 1/2 Page： 29-32 Publication year： May. 1992
JST Material Number： B0345C ISSN： 0924-4247 Document type： Article
Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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High-lifetime strained Si1-xGex films grown by rapid thermal chemical vapor deposition.

High-lifetime strained Si_1-xGe_x films grown by rapid thermal chemical vapor deposition.