Art
J-GLOBAL ID：200902015698602936   Reference number：90A0130422

Breakdown in p-n junction diodes made on polycrystalline silicon of large grain size.

大きな粒径の多結晶シリコン上に作ったp-n接合ダイオードにおけるブレークダウン
Author (3)：
NATARAJAN K

About NATARAJAN K

(Bharat Electronics Ltd., Bangalore, IND)

About Bharat Electronics Ltd., Bangalore, IND

, 
RAMKUMAR K

About RAMKUMAR K

(Indian Inst. Science, Bangalore, IND)

About Indian Inst. Science, Bangalore, IND

, 
SATYAM M

About SATYAM M

(Indian Inst. Science, Bangalore, IND)

About Indian Inst. Science, Bangalore, IND


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

About Journal of Applied Physics


Volume： 66  Issue： 5  Page： 2206-2208  Publication year： Sep. 01, 1989 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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polycrystal

About polycrystal

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
半導体-半導体接触【’81~’92】 
(BM03072N)

About 半導体-半導体接触【’81~’92】

,  Diodes 
(NC03050R)

About Diodes

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
粒径

About 粒径

, 
多結晶シリコン

About 多結晶シリコン

, 
p-n接合

About p-n接合

, 
ダイオード

About ダイオード

, 
ブレークダウン

About ブレークダウン


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