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ArticleJ-GLOBAL ID:200902015698602936整理番号:90A0130422

Breakdown in p-n junction diodes made on polycrystalline silicon of large grain size.

大きな粒径の多結晶シリコン上に作ったp‐n接合ダイオードにおけるブレークダウン

著者:NATARAJAN K(Bharat Electronics Ltd., Bangalore, IND)、RAMKUMAR K(Indian Inst. Science, Bangalore, IND)、SATYAM M(Indian Inst. Science, Bangalore, IND)
資料名:J Appl Phys 巻:66 号:5 ページ:2206-2208
発行年:1989年09月01日
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