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ArticleJ-GLOBAL ID:200902015700078425整理番号:90A0152896

Single-mode low-loss buried optical waveguide bends in GaInAsP/InP fabricated by dry etching.

ドライ・エッチングによりGaInAsP/InPに形成した単一モード低損失の埋込形光導波路曲り

著者:SINGH J(British Telecom Research Lab., Ipswich, GBR)、HENNING I(British Telecom Research Lab., Ipswich, GBR)、HARLOW M(British Telecom Research Lab., Ipswich, GBR)・・・
資料名:Electron Lett 巻:25 号:14 ページ:899-900
発行年:1989年07月06日
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