Characterization of polycrystalline silicon by ebic.

KITTLER M; LAERZ J; MORGENSTERN G; SEIFERT W

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J-GLOBAL ID：200902015703038599 Reference number：92A0271750

Characterization of polycrystalline silicon by ebic.

EBICによる多結晶シリコンの特性評価

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Material：
Volume： 1 Issue： C6 Page： C6.173-C6.179 Publication year： Dec. 1991
JST Material Number： A0743C ISSN： 1155-4339 Document type： Proceedings
Article type：原著論文 Country of issue： France (FRA) Language： ENGLISH (EN)

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Lattice defects in semiconductors

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