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ArticleJ-GLOBAL ID:200902015707509170整理番号:85A0513534

Diffusion phenomena and defect generation in rapidly annealed GaAs.

急速にアニールしたGaAsにおける拡散現象と欠陥の発生

著者:PEARTON S J(AT&T, New Jersey)、CUMMINGS K D(AT&T, New Jersey)
資料名:J Appl Phys 巻:58 号:4 ページ:1500-1504
発行年:1985年08月15日
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