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ArticleJ-GLOBAL ID:200902015708449902整理番号:90A0144260

A new device structure utilizing atomic layer doping (ALD) technology in Si systems.

原子層的ドープ(ALD)技術をSi系に利用した素子の新しい構造

著者:YAMAGUCHI K(Hitachi Ltd., Tokyo)、NAKAGAWA K(Hitachi Ltd., Tokyo)、SHIRAKI Y(Hitachi Ltd., Tokyo)
資料名:Ext Abstr 20th 1988 Int Conf Solid State Devices Mater ページ:17-20
発行年:1988年
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