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ArticleJ-GLOBAL ID:200902015708557560整理番号:90A0127749

Fabrication of ultrathin insulator films on n-Si substrate for electron tunnelling emitter arrays.

n型Si基板上の電子トンネルエミッタアレイ用絶縁体極薄膜の作製

著者:YOKOO K(Tohoku Univ., Sendai, JPN)、UCHIMI A(Tohoku Univ., Sendai, JPN)、OGISHI T(Tohoku Univ., Sendai, JPN)・・・
資料名:Inst Phys Conf Ser 号:99 ページ:21-24
発行年:1989年
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