Art
J-GLOBAL ID：200902015709615032   Reference number：88A0391004

Properties of thin strained Ga(As,P) layers.

ひずみのあるGa(As,P)薄層の特性
Author (3)：
PISTOL M-E

About PISTOL M-E

(Univ. Lund, Lund, SWE)

About Univ. Lund, Lund, SWE

, 
LEYS M R

About LEYS M R

(Univ. Lund, Lund, SWE)

About Univ. Lund, Lund, SWE

, 
SAMUELSON L

About SAMUELSON L

(Univ. Lund, Lund, SWE)

About Univ. Lund, Lund, SWE


Material：
Physical Review. B. Condensed Matter and Materials Physics  (Physical Review. B. Condensed Matter)

About Physical Review. B. Condensed Matter and Materials Physics


Volume： 37  Issue： 9  Page： 4664-4670  Publication year： Mar. 15, 1988 
JST Material Number： D0746A  ISSN： 1098-0121  CODEN： PRBMDO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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MOCVD

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,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
半導体-半導体接触【’81~’92】 
(BM03072N)

About 半導体-半導体接触【’81~’92】

,  Luminescence of semiconductors 
(BM08092S)

About Luminescence of semiconductors

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
ひずみ

About ひずみ

, 
Ga

About Ga

, 
薄層

About 薄層


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