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ArticleJ-GLOBAL ID:200902015714166408整理番号:92A0432029

シリコン窒化膜の酸化と酸化雰囲気

The oxidation of Si3N4 films in O2 and H2O ambients.

著者:渡辺啓仁(日本電気)、大西貞之(日本電気)、青砥なほみ(日本電気)・・・
資料名:応用物理学関係連合講演会講演予稿集 巻:39th 号:Pt 2 ページ:651
発行年:1992年03月
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