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J-GLOBAL ID：200902015719581721   Reference number：89A0063253

Electric conduction in P ion-implanted amorphous silicon.

Pイオンを注入したアモルファスシリコンの電気伝導
Author (4)：
MAEDA MASAO

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(金沢工大)

About 金沢工大

, 
UMEZU YOSHIFUMI

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(ローム)

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, 
TAO W Z

About TAO W Z

(Harbin Electronic Elements Research Inst., Ministry of Electronic Industry, CHN)

About Harbin Electronic Elements Research Inst., Ministry of Electronic Industry, CHN

, 
TANIWAKI MASAFUMI

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(北大 工)

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Material：
電子情報通信学会技術研究報告  (IEICE Technical Report (Institute of Electronics, Information and Communication Engineers))

About 電子情報通信学会技術研究報告


Volume： 88  Issue： 161  Page： 47-54(CPM88-43)  Publication year： Aug. 19, 1988 
JST Material Number： S0532B  ISSN： 0913-5685  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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vapor phase growth

About vapor phase growth

,...
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Electric conduction in semiconductors and insulators in general 
(BM03041P)

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Pイオン

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, 
注入

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, 
アモルファスシリコン

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, 
電気伝導

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