Art
J-GLOBAL ID：200902015733747691   Reference number：92A0419757

Ion sources for dry etching: Aspects of reactive ion beam etching for Si technology (invited).

ドライエッチングのイオン源:Si技術での反応性イオンビームエッチングの問題
Author (1)：
SCHEER H-C

About SCHEER H-C

(Fraunhofer Inst. Mikrostrukturtechnik, Berlin, DEU)

About Fraunhofer Inst. Mikrostrukturtechnik, Berlin, DEU


Material：
Review of Scientific Instruments  (Rev Sci Instrum)

About Review of Scientific Instruments


Volume： 63  Issue： 5  Page： 3050-3057  Publication year： May. 1992 
JST Material Number： D0517A  ISSN： 0034-6748  CODEN： RSINAK  Document type： Article
Article type： 文献レビュー  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
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silicon

About silicon

,...
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JST classification (3)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

,  Electron and ion sources 
(BD02020U)

About Electron and ion sources

,  Applications of plasma 
(BJ02110K)

About Applications of plasma

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
ドライエッチング

About ドライエッチング

, 
イオン源

About イオン源

, 
Si

About Si

, 
反応性イオンビームエッチング

About 反応性イオンビームエッチング


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