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J-GLOBAL ID:200902015735813888   Reference number:89A0104958

Interactions of deformation-induced dislocations with Σ=9(122) grain boundaries in Si studied by HREM.

Si内の変形誘起転位とΣ=9(122)粒界との相互作用のHREM法による研究
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Volume: 58  Issue:Page: 325-345  Publication year: Aug. 1988 
JST Material Number: E0753B  ISSN: 0141-8610  CODEN: PMAADG  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Lattice defects in semiconductors 

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