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ArticleJ-GLOBAL ID:200902018898090300整理番号:91A0076284

Transverse currents and contact resistances in the quantum Hall regime of Si-MOS structures.

Si‐MOS構造の量子Hall領域における横方向電流と接触抵抗

著者:NACHTWEI G(Humboldt‐Univ. Berlin, Berlin, DDR)、BREITLOW C(Humboldt‐Univ. Berlin, Berlin, DDR)、SALCHOW O(Humboldt‐Univ. Berlin, Berlin, DDR)・・・
資料名:Semicond Sci Technol 巻:5 号:11 ページ:1088-1092
発行年:1990年11月
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