Low-temperature photoluminescence in Al<sub>x</sub>Ga<sub>1-x</sub>As grown by molecular beam epitaxy.

REYNOLDS D C; BAJAJ K K; LITTON C W; SINGH J; YU P W; HENDERSON T; PEARAH P; MORKOC H

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J-GLOBAL ID：200902018899159835 Reference number：85A0513554

Low-temperature photoluminescence in Al_xGa_1-xAs grown by molecular beam epitaxy.

分子線エピタクシー成長のAl_xGa_1-xAsにおける低温光ルミネセンス

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Author (8)： , , , , , , ,
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Volume： 58 Issue： 4 Page： 1643-1646 Publication year： Aug. 15, 1985
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors

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Low-temperature photoluminescence in AlxGa1-xAs grown by molecular beam epitaxy.

Low-temperature photoluminescence in Al_xGa_1-xAs grown by molecular beam epitaxy.