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ArticleJ-GLOBAL ID:200902019105447781整理番号:92A0110324

TDMASを用いた水素ラジカルCVD法によるSiN膜の性質

SiN Film Properties Grown by Hydrogen Radical Enhanced CVD Using [(CH3)2N]3SiH.

著者:小槻一貴(長岡技科大)、安井寛治(長岡技科大)、赤羽正志(長岡技科大)・・・
資料名:応用物理学会学術講演会講演予稿集 巻:52nd 号:2 ページ:395
発行年:1991年10月
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