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ArticleJ-GLOBAL ID:200902023132745929整理番号:91A0572268

2光子吸収法を用いたZnSe/(001)GaAsの残留歪の評価

Residual strain in epitaxially grown ZnSe/GaAs studied by two-photon absorption spectroscopy.

著者:加藤幸雄(北大 応用電気研)、吉田幸司(北大 応用電気研)、南不二雄(北大 応用電気研)・・・
資料名:応用物理学関係連合講演会講演予稿集 巻:38th 号:Pt 1 ページ:254
発行年:1991年03月
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