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ArticleJ-GLOBAL ID:200902023136930356整理番号:87A0486301

110GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs.

インジウムすず酸化物/GaAsで作製した110GHz高効率フォトダイオード

著者:PARKER D G(GEC Research Ltd., Middx., GBR)、SAY P G(GEC Research Ltd., Middx., GBR)、HANSOM A M(GEC Research Ltd., Middx., GBR)・・・
資料名:Electron Lett 巻:23 号:10 ページ:527-528
発行年:1987年05月07日
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About J-GLOBAL

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