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ArticleJ-GLOBAL ID:200902023160520380整理番号:89A0348298

Laser annealing of implanted GaAs. Role of implantation defects.

イオン注入したひ化ガリウムのレーザアニーリング 注入欠陥の役割

著者:YAKIMKIN V N(P.N. Lebedev Physics Inst., Academy of Sciences of the USSR, Moscow, SUN)、USHAKOV V V(P.N. Lebedev Physics Inst., Academy of Sciences of the USSR, Moscow, SUN)、GIPPIUS A A(P.N. Lebedev Physics Inst., Academy of Sciences of the USSR, Moscow, SUN)・・・
資料名:Sov Phys Semicond 巻:22 号:9 ページ:989-992
発行年:1988年09月
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