Art
J-GLOBAL ID:200902023166398284   Reference number:92A0316823

Atomic layer epitaxy of ZnS by a new gas supplying system in low-pressure metalorganic vapor phase epitaxy.

低圧有機金属気相エピタクシーにおける新しいガス供給システムによるZnSの原子層エピタクシー
Author (2):
Material:
Volume: 117  Issue: 1/4  Page: 152-155  Publication year: Feb. 1992 
JST Material Number: B0942A  ISSN: 0022-0248  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=92A0316823&from=J-GLOBAL&jstjournalNo=B0942A") }}
JST classification (2):
JST classification
Category name(code) classified by JST.
Semiconductor thin films  ,  Materials of solid-state devices 
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page