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ArticleJ-GLOBAL ID:200902023181343313整理番号:89A0540082

The effect of the near-interface concentration change on the C-V characteristics of GaAs Schottki contacts.

GaAs Schottki接合のC‐V特性に及ぼす界面近傍濃度変化の影響

著者:HORVATH ZS J(Research Inst. Technical Physics of the Hungarian Academy of Sciences, Budapest, HUN)、N<span style=text-decoration:overline>E ́</span>METH‐SALLAY M(Research Inst. Technical Physics of the Hungarian Academy of Sciences, Budapest, HUN)、P<span style=text-decoration:overline>E ́</span>CZ B(Research Inst. Technical Physics of the Hungarian Academy of Sciences, Budapest, HUN)・・・
資料名:Cryst Prop Prep 巻:19/20 ページ:299-302
発行年:1989年
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