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J-GLOBAL ID：200902023181343313   Reference number：89A0540082

The effect of the near-interface concentration change on the C-V characteristics of GaAs Schottki contacts.

GaAs Schottki接合のC-V特性に及ぼす界面近傍濃度変化の影響

Author (4)： HORVATH ZS J (Research Inst. Technical Physics of the Hungarian Academy of Sciences, Budapest, HUN) ,  NEMETH-SALLAY M (Research Inst. Technical Physics of the Hungarian Academy of Sciences, Budapest, HUN) ,  PECZ B (Research Inst. Technical Physics of the Hungarian Academy of Sciences, Budapest, HUN) ,  JAROLI E (Central Research Inst. Physics of the Hungarian Academy of Sciences, Budapest, HUN)
Material： Crystal Properties and Preparation  (Cryst Prop Prep)
Volume： 19/20  Page： 299-302  Publication year： 1989 
JST Material Number： D0745B  ISSN： 0252-1067  Document type： Article
Article type： 短報  Country of issue： Switzerland (CHE)  Language： ENGLISH (EN)

Thesaurus term： gallium arsenide ,...

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JST classification (1)： 半導体-金属接触【’81~’92】  (BM03073E)

Terms in the title (3)： GaAs ,  界面近傍 ,  濃度変化