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ArticleJ-GLOBAL ID:200902023191413883整理番号:89A0371449

Sputtered tungsten silicides deposited at different argon pressures.

異なるアルゴン圧で析出させたスパッタけい化タングステン

著者:HARA T(Hosei Univ., Tokyo, JPN)、TAKAHASHI S(Hosei Univ., Tokyo, JPN)、CHEN S‐C(OKI Electric Industry Co., Ltd., Tokyo, JPN)・・・
資料名:J Electrochem Soc 巻:136 号:4 ページ:1174-1177
発行年:1989年04月
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