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ArticleJ-GLOBAL ID:200902023207172709整理番号:91A0325264

Improvement of InP crystal quality grown on GaAs substrates and device applications.

GaAs基板上に成長させたInP結晶品質の改善とデバイス応用

著者:KIMURA T(Mitsubishi Electric Corp., Hyogo, JPN)、KIMURA T(Mitsubishi Electric Corp., Hyogo, JPN)、ISHIMURA E(Mitsubishi Electric Corp., Hyogo, JPN)・・・
資料名:Journal of Crystal Growth 巻:107 号:1/4 ページ:827-831
発行年:1991年01月
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