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ArticleJ-GLOBAL ID:200902023213172702整理番号:90A0581876

Interface and bulk trap generation in metal-oxide-semiconductor capacitors.

金属‐酸化物‐半導体キャパシタにおける界面およびバルク捕獲中心の発生

著者:BUCHANAN D A(IBM East Fishkill, New York)、DIMARIA D J(IBM T.J. Watson Research Center, New York)
資料名:J Appl Phys 巻:67 号:12 ページ:7439-7452
発行年:1990年06月15日
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