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J-GLOBAL ID:200902023279766310   Reference number:91A0659806

Improvements in the heteroepitaxy of GaAs on Si by incorporating a ZnSe buffer layer.

ZnSeバッファ層を挿入することによるSi上GaAsのヘテロエピタクシーの改良
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Volume: 59  Issue:Page: 207-209  Publication year: Jul. 08, 1991 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Diodes 
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