A Three-Dimensional Simulation for the Dynamic Behavior of a Trench Capacitor dRAM Cell.

MORIYAMA K; ODANAKA S; ICHIKAWA Y

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J-GLOBAL ID：200902023323994597 Reference number：91A0570672

A Three-Dimensional Simulation for the Dynamic Behavior of a Trench Capacitor dRAM Cell.

トレンチ・キャパシタDRAMセルの動的挙動に対する三次元シミュレーション

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Author (3)： , ,
Material：
Volume： E74 Issue： 6 Page： 1615-1620 Publication year： Jun. 1991
JST Material Number： F0699B ISSN： 0917-1673 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Memory units , Semiconductor integrated circuit

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