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ArticleJ-GLOBAL ID:200902023344040194整理番号:92A0800810

チャネリングによるシリコン中のイオン照射損傷の濃度分布測定

Selfion-induced damage analysis in Si by channeling measurements.

著者:鈴木基之(京大)、藤田治之(京大)、吉田紘二(京大)・・・
資料名:日本原子力学会秋の大会予稿集 巻:1992 ページ:56
発行年:1992年09月
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