Art
J-GLOBAL ID：200902023344742180   Reference number：83A0071625

Transconductance degradation in VVMOS power transistors due to thermal and field effects.

熱的効果及び電界効果によるVVMOS電力トランジスタにおけるgmの劣化
Author (2)：
TARASEWICZ S W

About TARASEWICZ S W

(Univ. Toronto, Canada)

About Univ. Toronto, Canada

, 
SALAMA C A T

About SALAMA C A T

(Univ. Toronto, Canada)

About Univ. Toronto, Canada


Material：
Solid-State Electronics  (Solid-State Electron)

About Solid-State Electronics


Volume： 25  Issue： 12  Page： 1165-1170  Publication year： Dec. 1982 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
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MOSFET

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,...
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JST classification (1)：
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Transistors 
(NC03070N)

About Transistors

Terms in the title (3)：
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熱的効果

About 熱的効果

, 
電界効果

About 電界効果

, 
電力トランジスタ

About 電力トランジスタ


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