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ArticleJ-GLOBAL ID:200902023344742180整理番号:83A0071625

Transconductance degradation in VVMOS power transistors due to thermal and field effects.

熱的効果及び電界効果によるVVMOS電力トランジスタにおけるgmの劣化

著者:TARASEWICZ S W(Univ. Toronto, Canada)、SALAMA C A T(Univ. Toronto, Canada)
資料名:Solid-State Electron 巻:25 号:12 ページ:1165-1170
発行年:1982年12月
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About J-GLOBAL

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