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J-GLOBAL ID：200902051222243535   Reference number：91A0943359

Characterization of GaSb-based alloy semiconductors.

Author (5)： UEKITA H (Nagoya Inst. Technology, Nagoya, JPN) ,  KITAMURA N (Suzuka Coll. Technology, Suzuka, JPN) ,  ICHIMURA M (Nagoya Inst. Technology, Nagoya, JPN) ,  USAMI A (Nagoya Inst. Technology, Nagoya, JPN) ,  WADA T (Nagoya Inst. Technology, Nagoya, JPN)
Material： Long-Wavelength Semiconductor Devices, Materials and Processes  (Long Wavel Semicond Devices Mater Process)
Page： 169-174  Publication year： 1991 
JST Material Number： K19910615  ISBN： 1-55899-108-5  Document type： Proceedings
Country of issue： United States (USA)  Language： ENGLISH (EN)

Terms in the title (1)： GaSb