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ArticleJ-GLOBAL ID:200902051374811776整理番号:90A0933126

High-field Hall effect and crystal orientation dependence of magnetoresistance in thin films of CeAl3.

CeAl3の薄膜における磁気抵抗効果の高磁場Hall効果および結晶方位依存性

著者:ROESLER G M JR(MIT, MA, USA)、TEDROW P M(MIT, MA, USA)
資料名:Phys B Condens Matter 巻:165/166 号:Pt 1 ページ:419-420
発行年:1990年08月
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