Monolithic integrated photoreceiver for 1.3-1.55-μm wavelengths: Association of a Schottky photodiode and a field-effect transistor on GaInP-GaInAs heteroepitaxy.

THERANI A H; DECOSTER D; VILCOT J P; RAZEGHI M

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J-GLOBAL ID：200902051375507230 Reference number：88A0542796

Monolithic integrated photoreceiver for 1.3-1.55-μm wavelengths: Association of a Schottky photodiode and a field-effect transistor on GaInP-GaInAs heteroepitaxy.

波長1.3-1.55μm用モノリシック集積回路受光器 GaInP-GaInAsヘテロエピタクシー上のSchottkyフォトダイオードと電界効果トランジスタの組み合わせ

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Material：
Volume： 64 Issue： 4 Page： 2215-2218 Publication year： Aug. 15, 1988
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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半導体-半導体接触【’81~’92】 , Semiconductor integrated circuit

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