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ArticleJ-GLOBAL ID:200902051375507230整理番号:88A0542796

Monolithic integrated photoreceiver for 1.3-1.55-.MU.m wavelengths: Association of a Schottky photodiode and a field-effect transistor on GaInP-GaInAs heteroepitaxy.

波長1.3―1.55μm用モノリシック集積回路受光器 GaInP‐GaInAsヘテロエピタクシー上のSchottkyフォトダイオードと電界効果トランジスタの組み合わせ

著者:THERANI A H(Univ. Sciences et Techniques de Lille‐Flandres‐Artois, Villeneuve d’Ascq, FRA)、DECOSTER D(Univ. Sciences et Techniques de Lille‐Flandres‐Artois, Villeneuve d’Ascq, FRA)、VILCOT J P(Univ. Sciences et Techniques de Lille‐Flandres‐Artois, Villeneuve d’Ascq, FRA)・・・
資料名:Journal of Applied Physics 巻:64 号:4 ページ:2215-2218
発行年:1988年08月15日
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