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ArticleJ-GLOBAL ID:200902051436375501整理番号:84A0242815

Two-dimensional electron gas in a selectively doped InP/In0.53Ga0.47As heterostructure grown by chloride transport vapor phase epitaxy.

塩化物輸送気相エピタクシーにより成長し,選択的にドープしたInP/In0.53Ga0.47Asヘテロ構造における二次元電子ガス

著者:TAKIKAWA M(Fujitsu Lab. Ltd., Atsugi)、KOMENO J(Fujitsu Lab. Ltd., Atsugi)、OZEKI M(Fujitsu Lab. Ltd., Atsugi)
資料名:Applied Physics Letters 巻:43 号:3 ページ:280-282
発行年:1983年08月01日
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