Two-dimensional electron gas in a selectively doped InP/In<sub>0.53</sub>Ga<sub>0.47</sub>As heterostructure grown by chloride transport vapor phase epitaxy.

TAKIKAWA M; KOMENO J; OZEKI M

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J-GLOBAL ID：200902051436375501 Reference number：84A0242815

Two-dimensional electron gas in a selectively doped InP/In_0.53Ga_0.47As heterostructure grown by chloride transport vapor phase epitaxy.

塩化物輸送気相エピタクシーにより成長し,選択的にドープしたInP/In_0.53Ga_0.47Asヘテロ構造における二次元電子ガス

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Author (3)： , ,
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Volume： 43 Issue： 3 Page： 280-282 Publication year： Aug. 01, 1983
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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半導体-半導体接触【’81~’92】

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Two-dimensional electron gas in a selectively doped InP/In0.53Ga0.47As heterostructure grown by chloride transport vapor phase epitaxy.

Two-dimensional electron gas in a selectively doped InP/In_0.53Ga_0.47As heterostructure grown by chloride transport vapor phase epitaxy.