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ArticleJ-GLOBAL ID:200902131007392612整理番号:98A0559793

減圧MOVPE法によるSiC基板上のGaN系結晶の成長とその評価

Low-Pressure MOVPE Growth of GaN-Based Materials on SiC Substrates.

著者:倉又朗人(富士通研)、堀野和彦(富士通研)、棚橋俊之(富士通研)
資料名:応用物理学関係連合講演会講演予稿集 巻:45th ページ:19
発行年:1998年03月
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