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ArticleJ-GLOBAL ID:200902131013030692整理番号:98A0773683

Growth of self-assembled InAs and InAsxP1-x dots on InP by metalorganic vapour phase epitaxy.

InP上での自己形成InAs及びInAsxP1-xドットの有機金属気相エピタクシーによる成長

著者:CARLSSON N(Lund Univ., Lund, SWE)、JUNNO T(Lund Univ., Lund, SWE)、MONTELIUS L(Lund Univ., Lund, SWE)・・・
資料名:J Cryst Growth 巻:191 号:3 ページ:347-356
発行年:1998年07月
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