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ArticleJ-GLOBAL ID:200902131014329756整理番号:94A0463752

Solid-phase epitaxial regrowth of Sb-implanted Si1-xGex strained layers: Kinetics and electrical properties.

Sbイオンを注入したSi1-xGex歪層の固相エピタクシー再成長 カイネティクスと電気的性質

著者:ATZMON Z(Technion, Haifa, ISR)、EIZENBERG M(Technion, Haifa, ISR)、SHACHAM‐DIAMAND Y(Cornell Univ., New York)・・・
資料名:J Appl Phys 巻:75 号:8 ページ:3936-3943
発行年:1994年04月15日
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