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ArticleJ-GLOBAL ID:200902131015399146整理番号:97A0868720

Materials Design of the Codoping for the Fabrication of Low-Resistivity p-Type ZnSe and GaN by ab-initio Electronic Structure Calculation.

ab‐initio電子構造計算による低抵抗率のp型ZnSe及びGaNの作製における同時ドーピングの材料設計

著者:KATAYAMA‐YOSHIDA H(Osaka Univ., Osaka, JPN)、YAMAMOTO T(Osaka Univ., Osaka, JPN)
資料名:Phys Status Solidi B 巻:202 号:2 ページ:763-773
発行年:1997年08月01日
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