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ArticleJ-GLOBAL ID:200902131016665745整理番号:96A0448666

Dry oxidation mechanisms of thin dielectric films formed under N2O using isotopic tracing methods.

同位体追跡法を用いて調べたN2O中で作製した薄い誘電体膜の乾式酸化のメカニズム

著者:GANEM J‐J(Univ. Paris 6 et 7, Paris, FRA)、RIGO S(Univ. Paris 6 et 7, Paris, FRA)、TRIMAILLE I(Univ. Paris 6 et 7, Paris, FRA)・・・
資料名:Appl Phys Lett 巻:68 号:17 ページ:2366-2368
発行年:1996年04月22日
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