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ArticleJ-GLOBAL ID:200902131022776800整理番号:01A0568255

Recombination enhanced defect reactions in 1MeV electron irradiated p InGaP.

1MeV電子を照射したp型InGaPにおける再結合促進欠陥反応

著者:KHAN A(Toyota Technological Inst., Nagoya, JPN)、YAMAGUCHI M(Toyota Technological Inst., Nagoya, JPN)、BOURGOIN J C(Univ. Pierre et Marie Curie, Paris, FRA)・・・
資料名:J Appl Phys 巻:89 号:8 ページ:4263-4268
発行年:2001年04月15日
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