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ArticleJ-GLOBAL ID:200902131031727048整理番号:02A0633430

Series Resistance Calculation for Source/Drain Extension Regions Using 2-D Device Simulation.

2‐Dデバイスシミュレーションを用いた,ソース/ドレイン延在領域に対する直列抵抗値の計算

著者:KWONG M Y(Stanford Univ., CA)、CHOI C‐H(Stanford Univ., CA)、KASNAVI R(Stanford Univ., CA)・・・
資料名:IEEE Trans Electron Devices 巻:49 号:7 ページ:1219-1226
発行年:2002年07月
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