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ArticleJ-GLOBAL ID:200902131033705262整理番号:94A0429541

A method of improving the SIMS analysis of Si in GaAs by monitoring SiO2- ions at oblique angles of bombardment.

斜め角衝撃によるSiO2-イオンをモニタリングしたGaAs中のSiのSIMS分析の改善法

著者:SHARMA V K M(Imperial Coll., London, GBR)、MCPHAIL D S(Imperial Coll., London, GBR)、HSU C M(Imperial Coll., London, GBR)・・・
資料名:Nucl Instrum Method Phys Res Sect B Beam Interact Mater At 巻:85 号:1/4 ページ:391-394
発行年:1994年03月
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