Art
J-GLOBAL ID：200902131033705262
Reference number：94A0429541
A method of improving the SIMS analysis of Si in GaAs by monitoring SiO2- ions at oblique angles of bombardment.
斜め角衝撃によるSiO2-イオンをモニタリングしたGaAs中のSiのSIMS分析の改善法
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Author (4)：
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Material：
Volume：
85
Issue：
1/4
Page：
391-394
Publication year：
Mar. 1994
JST Material Number：
H0899A
ISSN：
0168-583X
Document type：
Article
Article type：
原著論文
Country of issue：
Netherlands (NLD)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Mass spectrometry
, Materials of solid-state devices
Terms in the title (6)：
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