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ArticleJ-GLOBAL ID:200902131033715276整理番号:94A0925488

Cluster calculation of the boron centre in SiC.

SiC中のほう素中心のクラスタ計算

著者:PETRENKO T L(Inst. Physics of Semiconductors, National Academy of Sciences, Kiev, SUN)、BUGAI A A(Inst. Physics of Semiconductors, National Academy of Sciences, Kiev, SUN)、BARYAKHTAR V G(Inst. Physics of Semiconductors, National Academy of Sciences, Kiev, SUN)・・・
資料名:Semicond Sci Technol 巻:9 号:10 ページ:1849-1852
発行年:1994年10月
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