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J-GLOBAL ID：200902131037478520   Reference number：93A0739509

Molecular Beam Epitaxy technology for selective area embedded InGaAs layers in InP substrates.

Author (7)： GEORGAKILAS A (Univ. Maryland, MD, USA) ,  CHRISTOU A (Univ. Maryland, MD, USA) ,  ZEKENTES K (Foundation for Research and Technology-Hellas (FORTH), Crete, GRC) ,  TSAGARAKI K (Foundation for Research and Technology-Hellas (FORTH), Crete, GRC) ,  HALKIAS G (Foundation for Research and Technology-Hellas (FORTH), Crete, GRC) ,  LEFEBVRE P (Univ. Montpellier II, Montpellier, FRA) ,  ALLEGRE J (Univ. Montpellier II, Montpellier, FRA)
Material： Proceedings of SPIE  (Proceedings. SPIE - The International Society for Optical Engineering)
Volume： 1851  Page： 138-148  Publication year： 1993 
JST Material Number： D0943A  ISSN： 0277-786X  CODEN： PSISDG  Document type： Proceedings
Country of issue： United States (USA)  Language： ENGLISH (EN)

Terms in the title (2)： InGaAs ,  InP