Art
J-GLOBAL ID：200902131040472770   Reference number：97A0722286

Extended defect formation and the flux of interstitials in Si-ion implanted silicon.

Siイオンを注入したけい素における拡張した欠陥形成と格子間原子のフラックス
Author (2)：
SIMPSON T W

About SIMPSON T W

(Univ. Western Ontario, Ontario, CAN)

About Univ. Western Ontario, Ontario, CAN

, 
MITCHELL I V

About MITCHELL I V

(Univ. Western Ontario, Ontario, CAN)

About Univ. Western Ontario, Ontario, CAN


Material：
Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms  (Nuclear Instruments and Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms)

About Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms


Volume： 127/128  Page： 94-97  Publication year： May. 1997 
JST Material Number： H0899A  ISSN： 0168-583X  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
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ion implantation

About ion implantation

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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dechanneling

About dechanneling


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JST classification (2)：
JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

,  Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

Terms in the title (7)：
Terms in the title
Keywords automatically extracted from the title.
Siイオン

About Siイオン

, 
注入

About 注入

, 
けい素

About けい素

, 
拡張

About 拡張

, 
欠陥形成

About 欠陥形成

, 
格子間原子

About 格子間原子

, 
フラックス

About フラックス


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