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ArticleJ-GLOBAL ID:200902131041395809整理番号:93A0433284

超薄層SOIパワーMOSFETのデバイスシミュレーション

Device Simulation of Ultra-thin SOI Power MOSFET.

著者:坂井達郎(NTT 境界領域研)、HASEKIOGLU A(Rensselaer Polytechnic Inst.)、谷内利明(NTT 境界領域研)
資料名:電子情報通信学会大会講演論文集 巻:1993 号:Shunki Pt 5 ページ:5.183
発行年:1993年03月
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About J-GLOBAL

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