Molecular beam epitaxial growth of InAs on a (311)A corrugated surface: Growth mechanism and morphology.

LUBYSHEV D I; MICOVIC M; MILLER D L; CHIZHOV I; WILLIS R F

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J-GLOBAL ID：200902131049137744 Reference number：98A0684832

Molecular beam epitaxial growth of InAs on a (311)A corrugated surface: Growth mechanism and morphology.

(311)A波形表面上のInAsの分子線エピタキシャル成長成長機構と形態

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Material：
Volume： 16 Issue： 3 Page： 1339-1342 Publication year： May. 1998
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Surface structure of semiconductors

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