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ArticleJ-GLOBAL ID:200902131050535389整理番号:94A0429544

Application of real-time low-energy ion scattering spectroscopy to heterointerface formation processes of molecular beam epitaxially grown III-V compound semiconductors.

分子ビームエピタキシャル成長したIII‐V化合物半導体のヘテロ界面形成過程に対する実時間低エネルギーイオン散乱分光法の適用

著者:TAMURA M(Optoelectronics Technology Research Lab., Ibaraki, JPN)、SAITOH T(Optoelectronics Technology Research Lab., Ibaraki, JPN)、SUGIYAMA N(Toshiba R&D Center, Kawasaki, JPN)・・・
資料名:Nucl Instrum Method Phys Res Sect B Beam Interact Mater At 巻:85 号:1/4 ページ:404-413
発行年:1994年03月
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